Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures

被引：14

作者：

Gillin, WP ^{[1
]}

机构：

[1] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.369160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of interdiffusion experiments on two multiple quantum well heterostructures of InGaAs/GaAs are presented. The two samples each had four quantum wells with indium concentrations, in order from the surface, of 5%, 15%, 20%, and 10%. The two samples also had different barrier layer thicknesses to allow any strain or depth dependence of the diffusion to be observed. No effect of strain or depth on the diffusion was observed. (C) 1999 American Institute of Physics. [S0021-8979(99)00602-7].

引用

页码：790 / 793

页数：4

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