Improved internal quantum efficiency of green emitting InGaN/GaN multiple quantum wells by in preflow for InGaN well growth

被引：23
作者：
Kumar, Muthusamy Senthil [1 ]
Park, Jae Young
Lee, Yong Seok
Chung, Sang Jo
Hong, Chang-Hee
Suh, Eun-Kyung
机构：
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
[2] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Chonju 561756, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 02期
关键词：
MOCVD; InGaN/GaN MQWs; surface pit; photoluminescence; internal quantum efficiency;
D O I：
10.1143/JJAP.47.839
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A series of green emitting In1-xGaxN/GaN multi-quantum wells (MQWs) has been grown by using low pressure metal organic chemical vapor deposition. Effects of In flow prior to InGaN well growth for a short duration on structural and optical properties of the MQWs have been studied. In pre-flow does not affect the structural properties such as In composition and interface abruptness of the InGaN/GaN MQW structure. But, it red shifts the photoluminescence (PL) emission peak of MQWs with increase of In pre-flow duration. For specific emission energy, the surface pit density of MQWs grown with In pre-flow is significantly lower than that of MQWs grown without In pre-flow. In pre-flow samples show about 30% enhancement of PL internal quantum efficiency in deep green region (>530nm) compared to MQWs grown without In pre-flow.
引用
收藏
页码：839 / 842
页数：4
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