Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second

被引：17
作者：
Yu, Yong-Qiang [1 ]
Luo, Lin-Bao [1 ]
Wang, Ming-Zheng [1 ]
Wang, Bo [1 ]
Zeng, Long-Hui [1 ]
Wu, Chun-Yan [1 ]
Jie, Jian-Sheng [2 ,3 ]
Liu, Jian-Wei [4 ]
Wang, Li [1 ]
Yu, Shu-Hong [4 ]
机构：
[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Anhui Prov Key Lab Adv Funct Mat & Devices, Hefei 230009, Anhui, Peoples R China
[2] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[3] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[4] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Div Nanomat & Chem, Dept Chem, Hefei 230026, Peoples R China
来源：
NANO RESEARCH | 2015年 / 8卷 / 04期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
II-VI group; detectivity; Schottky barrier diode; optoelectronic device; interfacial states; DETECTION-EFFICIENCY; HIGH-DETECTIVITY; PERFORMANCE; DETECTORS; DENSITY; NANOWIRES; AREA; UV;
D O I：
10.1007/s12274-014-0587-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 x 10(-17) W (similar to 85 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 x 10(20) cm center dot Hz(1/2)center dot W-1 and 6.6 x 10(5), respectively. It is found that the presence of the trapping states at the p-ZnS NR/ITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developing high-performance optoelectronic devices in the future.
引用
收藏
页码：1098 / 1107
页数：10
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