Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures

被引：9
作者：
Bodnar, IV
Victorov, IA
Kushner, TL
Rud', VY
Rud', VY
机构：
[1] Belarussian State Univ Informat & Radioelect, Dept Chem, Minsk 220027, BELARUS
[2] Natl Acad Sci Belarus, Inst Solid State & Semicond Phys, Minsk 220027, BELARUS
[3] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[4] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
THIN SOLID FILMS | 2005年 / 487卷 / 1-2期
关键词：
composition; X-ray diffraction; photosensitive; heterojunctions;
D O I：
10.1016/j.tsf.2005.01.064
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heterojunctions based on p-CuIn3Se5 crystals are fabricated by putting naturally cleaved n-GaSe thin wafers onto polished surface of p-CuIn3Se5 wafers. The current-voltage characteristics and mechanisms of current flow in the investigated heterojunctions are analyzed. The photovoltaic effect revealed in the fabricated structures is discussed. It is shown that the fabricated photosensitive heterojunctions are promising for the development of selective analysers of linearly polarized radiation. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：199 / 201
页数：3
相关论文
共 13 条
  • [1] PIEZOELECTRIC NONLINEAR OPTIC CUGAS2 AND CUINS2 CRYSTAL-STRUCTURE - SUBLATTICE DISTORTION IN A1BIIIC2VI AND AIIBIVC2V TYPE CHALCOPYRITES
    ABRAHAMS, SC
    BERNSTEI.JL
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1973, 59 (10) : 5415 - 5422
  • [2] Bodnar I. V., 1996, CRYST RES TECHNOL, V31, P261
  • [3] Photosensitivity of structures based on I-IIIn-VIm ternary compounds containing ordered vacancies
    Bodnar', IV
    Rud', VY
    Rud', YV
    Yakushev, MV
    [J]. SEMICONDUCTORS, 2002, 36 (10) : 1132 - 1135
  • [4] BODNAR IV, 2002, ZH PRIKL SPEKTROSK, V69, P519
  • [5] BODNAR IV, 1995, IAN SSSR NEORG MATER, V31, P899
  • [6] Physical vapor deposition of hexagonal and tetragonal CuIn5Se8 thin films
    Kohara, N
    Nishiawaki, S
    Negami, T
    Wada, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6316 - 6320
  • [7] Crystal Growth, Structural and Optical Characterization of the Ordered Vacancy Compounds of the I-III3-VI5 and I-III5-VI8 Families
    Marin, Giovanni
    Marquez, Rigoberto
    Guevaraba, Rafael
    Wasim, Syed M.
    Delgado, Jose M.
    Rincon, Carlos
    Sanchez Perez, Gerardo
    Molina, Idelfonzo
    Bocaranda, Pablo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 44 - 45
  • [8] MEKTIEV NM, 1978, SEMICONDUCTORS, V12, P924
  • [9] PREPARATION AND CHARACTERIZATION OF CU(IN1-XGAX)(3)SE-5 THIN-FILMS
    NEGAMI, T
    KOHARA, N
    NISHITANI, M
    WADA, T
    HIRAO, T
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (06) : 825 - 827
  • [10] Structural and physical-chemical properties of the CuGa5Se8, CuGa3Se5 and CuIn3Se5 compounds
    Orlova, NS
    Bodnar, IV
    Kushner, TL
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) : 1895 - 1899
12