Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures

被引：9

作者：

Bodnar, IV

Victorov, IA

Kushner, TL

Rud', VY

机构：

[1] Belarussian State Univ Informat & Radioelect, Dept Chem, Minsk 220027, BELARUS

[2] Natl Acad Sci Belarus, Inst Solid State & Semicond Phys, Minsk 220027, BELARUS

[3] St Petersburg State Tech Univ, St Petersburg 195251, Russia

[4] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

THIN SOLID FILMS | 2005年 / 487卷 / 1-2期

关键词：

composition; X-ray diffraction; photosensitive; heterojunctions;

D O I：

10.1016/j.tsf.2005.01.064

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterojunctions based on p-CuIn3Se5 crystals are fabricated by putting naturally cleaved n-GaSe thin wafers onto polished surface of p-CuIn3Se5 wafers. The current-voltage characteristics and mechanisms of current flow in the investigated heterojunctions are analyzed. The photovoltaic effect revealed in the fabricated structures is discussed. It is shown that the fabricated photosensitive heterojunctions are promising for the development of selective analysers of linearly polarized radiation. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：199 / 201

页数：3

共 13 条

[1] PIEZOELECTRIC NONLINEAR OPTIC CUGAS2 AND CUINS2 CRYSTAL-STRUCTURE - SUBLATTICE DISTORTION IN A1BIIIC2VI AND AIIBIVC2V TYPE CHALCOPYRITES [J].