Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

被引：145

作者：

Carlin, JF ^{[1
]}

Zellweger, C ^{[1
]}

Dorsaz, J ^{[1
]}

Nicolay, S ^{[1
]}

Christmann, G ^{[1
]}

Feltin, E ^{[1
]}

Butté, R ^{[1
]}

Grandjean, N ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 11期

关键词：

D O I：

10.1002/pssb.200560968

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state-of-the-art values for III-nitrides, and announce the future importance of AlInN in GaN-based optoelectronics. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2326 / 2344

页数：19

共 43 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy [J].

Ambacher, O ;

Rieger, W ;

Ansmann, P ;

Angerer, H ;

Moustakas, TD ;

Stutzmann, M .

SOLID STATE COMMUNICATIONS, 1996, 97 (05) :365-370

[3] Impact of planar microcavity effects on light extraction - Part I: Basic concepts and analytical trends [J].

Benisty, H ;

De Neve, H ;

Weisbuch, C .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1612-1631

[4] Method of source terms for dipole emission modification in modes of arbitrary planar structures [J].

Benisty, H ;

Stanley, R ;

Mayer, M .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1998, 15 (05) :1192-1201

[5] Optical constants of epitaxial AlGaN films and their temperature dependence [J].

Brunner, D ;

Angerer, H ;

Bustarret, E ;

Freudenberg, F ;

Hopler, R ;

Dimitrov, R ;

Ambacher, O ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5090-5096

[6] Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors -: art. no. 031107 [J].

Carlin, JF ;

Dorsaz, J ;

Feltin, E ;

Butté, R ;

Grandjean, N ;

Ilegems, M ;

Laügt, M .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[7] High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN [J].

Carlin, JF ;

Ilegems, M .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :668-670

[8] Dynamics of anomalous optical transitions in AlxGa1-xN alloys [J].

Cho, YH ;

Gainer, GH ;

Lam, JB ;

Song, JJ ;

Yang, W ;

Jhe, W .

PHYSICAL REVIEW B, 2000, 61 (11) :7203-7206

[9] InGaN/GaN resonant-cavity LED including an AlInN/GaN bragg mirror [J].

Dorsaz, J ;

Carlin, JF ;

Zellweger, CM ;

Gradecak, S ;

Ilegems, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2004, 201 (12) :2675-2678

[10] Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers [J].

Feltin, E ;

Butté, R ;

Carlin, JF ;

Dorsaz, J ;

Grandjean, N ;

Ilegems, M .

ELECTRONICS LETTERS, 2005, 41 (02) :94-95

← 1 2 3 4 5 →