Effects of carrier trapping and scattering on hole transport properties of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine thin films

被引：38
作者：
Li, Bixin [1 ]
Chen, Jiangshan [1 ]
Zhao, Yongbiao [1 ]
Yang, Dezhi [1 ]
Ma, Dongge [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China
来源：
ORGANIC ELECTRONICS | 2011年 / 12卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Trap; Scatterer; Mobility; Charge transport mechanisms; LIGHT-EMITTING DEVICES; DIODES; ELECTRON; LAYER;
D O I：
10.1016/j.orgel.2011.03.026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of trapping and scattering by dopant on the hole transport properties of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) have been investigated by temperature dependent current-voltage characteristics, admittance spectroscopy, and luminance-voltage characteristics. Three dopants, including 4,4',4 ''-tris (N-3-methyl-phenyl-N-phenylamine) triphenylamine (m-MTDATA) behaving as hole traps, tris-(8-hydroxyquinolinato) aluminum (Alq(3)) and 4,4',4 ''-tri(N-carbazolyl)-triphenylamine (TCTA) acting as hole scatterers, are used in this research. It has been found that both trapping and scattering lower hole mobility in NPB, but the magnitude differs strongly. The traps are revealed to induce significantly increase in total density of traps whereas there is a slight variation for the scattering. These differences are attributed to two different charge transport mechanisms. The effect of doping on the performances of electroluminescent devices has also been studied. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：974 / 979
页数：6
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