Origin of the existence of inter-granular glassy films in β-Si3N4

被引:3
作者
Adhikari, Puja [1 ]
Shafei, Layla [1 ]
San, Saro [1 ]
Rulis, Paul [1 ]
Ching, Wai-Yim [1 ]
机构
[1] Univ Missouri Kansas City, Kansas City, MO 64110 USA
关键词
beta-Si3N4; electronic structure and bonding; inter-granular glassy film (IGF); mechanical properties; total bond order density; SILICATE INTERGRANULAR FILMS; ELECTRONIC-STRUCTURE; CRYSTALLINE PHASES; GRAIN-BOUNDARIES; NITRIDE; SIMULATION; CERAMICS; SI3N4;
D O I
10.1111/jace.16818
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Inter-granular glassy films (IGFs) are ubiquitous in structural ceramics and they play a critical role in defining their properties. The detailed origin of IGFs has been debated for decades with no firm conclusion. Herein, we report the result of quantum mechanical modeling on a realistic IGF model in beta-Si3N4 that unravels the fundamental reason for its development. We calculate the electronic structure, interatomic bonding, and mechanical properties using ab initio density functional theory with parallel calculations on crystalline beta-Si3N4, alpha-Si3N4, gamma-Si3N4, and Si2N2O. The total bond order density-a quantum mechanical metric characterizing internal cohesion-of the IGF model and crystalline beta-Si3N4 are found to be identical. Detailed analysis shows that weakening of the bonds in the glassy film is compensated by strengthening of the interfacial bonds between the crystalline grain and the glassy layer. This provides a natural explanation for the ubiquitous existence of IGFs in silicon nitride and other structural ceramics. Moreover, the mechanical properties of this IGF model reveal its structural flexibility due to the presence of the less rigid glassy layer. This work demonstrates that high-level computational modeling can now explain some of the most intriguing phenomena in nanoscale ceramic materials.
引用
收藏
页码:737 / 743
页数:7
相关论文
共 48 条
[1]   Relating atomistic grain boundary simulation results to the phase-field model [J].
Bishop, CM ;
Carter, WC .
COMPUTATIONAL MATERIALS SCIENCE, 2002, 25 (03) :378-386
[2]   Grain boundary complexions [J].
Cantwell, Patrick R. ;
Tang, Ming ;
Dillon, Shen J. ;
Luo, Jian ;
Rohrer, Gregory S. ;
Harmer, Martin P. .
ACTA MATERIALIA, 2014, 62 :1-48
[3]   Complex nonlinear deformation of nanometer intergranular glassy films in β-Si3N4 -: art. no. 256103 [J].
Chen, J ;
Ouyang, LZ ;
Rulis, P ;
Misra, A ;
Ching, WY .
PHYSICAL REVIEW LETTERS, 2005, 95 (25)
[4]   Ab initio modeling of clean and Y-doped grain boundaries in alumina and intergranular glassy films (IGF) in β-Si3N4 [J].
Ching, W. Y. ;
Chen, Jun ;
Rulis, Paul ;
Ouyang, Lizhi ;
Misra, Anil .
JOURNAL OF MATERIALS SCIENCE, 2006, 41 (16) :5061-5067
[5]   Theoretical study of the elasticity, mechanical behavior, electronic structure, interatomic bonding, and dielectric function of an intergranular glassy film model in prismatic β-Si3N4 [J].
Ching, W. Y. ;
Rulis, Paul ;
Ouyang, Lizhi ;
Aryal, Sitaram ;
Misra, Anil. .
PHYSICAL REVIEW B, 2010, 81 (21)
[6]   Ab initio tensile experiment on a model of an intergranular glassy film in β-Si3N4 with prismatic surfaces [J].
Ching, W. Y. ;
Rulis, Paul ;
Ouyang, Lizhi ;
Misra, A. .
APPLIED PHYSICS LETTERS, 2009, 94 (05)
[7]  
Ching W.-Y., 2012, ELECT STRUCTURE METH
[8]   First-principles study in an inter-granular glassy film model of silicon nitride [J].
Ching, Wai-Yim ;
Yoshiya, Masato ;
Adhikari, Puja ;
Rulis, Paul ;
Ikuhara, Yuichi ;
Tanaka, Isao .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2018, 101 (07) :2673-2688
[9]   Electronic structure and bonding of all crystalline phases in the silica-yttria-silicon nitride phase equilibrium diagram [J].
Ching, WY .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (11) :1996-2013
[10]   THEORETICAL-STUDIES OF THE ELECTRONIC-PROPERTIES OF CERAMIC MATERIALS [J].
CHING, WY .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3135-3160