Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells

被引：39

作者：

Bagatin, Marta ^{[1
,2
]}

Gerardin, Simone ^{[1
,2
]}

Paccagnella, Alessandro ^{[1
,2
]}

Visconti, Angelo ^{[3
]}

机构：

[1] Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, Padua, Italy

[2] Ist Nazl Fis Nucl, Padua, Italy

[3] Numonyx, R&D Technol Dev, Agrate Brianza, MI, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 03期

关键词：

Flash memories; heavy ions; radiation effects; single event upset; NAND; PROTON;

D O I：

10.1109/TNS.2011.2122268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The corruption of the information stored in floating gate cells due to heavy-ion strikes is a critical issue for the use of Flash memories in space. In this work we examine how feature size scaling affects the single event upset sensitivity of multi-level floating gate cells with NAND architecture. Both experimental data on heavy-ion irradiation and analytical modeling are used to study how the threshold LET and saturation cross section depend on the cell feature size. A comparison is also carried out between multilevel and single-level floating gate cells.

引用

页码：969 / 974

页数：6

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