Reevaluation of PbTe1-xIx as high performance n-type thermoelectric material

被引:348
作者
LaLonde, Aaron D. [1 ]
Pei, Yanzhong [1 ]
Snyder, G. Jeffrey [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
关键词
NANOSTRUCTURED THERMOELECTRICS; LEAD-CHALCOGENIDES; VALENCE-BAND; THERMAL DIFFUSIVITY; TRANSPORT PHENOMENA; PBTE; FIGURE; MERIT; POWER; ENHANCEMENT;
D O I
10.1039/c1ee01314a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8 x 10(18)-1.4 x 10(20) cm(-3) are reinvestigated from room temperature to 800 K. The electronic transport properties, resistivity and Seebeck coefficient in this study are effectively consistent with prior reports, however the thermal conductivity has been found to be historically overestimated. The reassessment of the thermal transport properties, in combination with careful control of the carrier density by iodine doping, reveals a significantly larger figure of merit, zT similar to 1.4, than often previously reported for n-type PbTe. The results and analysis of the data from this study lead to a redetermination of zT for this historical thermoelectric material and provide a renewed interest in n-type PbTe based materials.
引用
收藏
页码:2090 / 2096
页数:7
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