Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

被引：2

作者：

Loh, Wei-Yip ^{[1
]}

Zang, Hui

Oh, Hoon-Jung

Choi, Kyu-Jin

Nguyen, Hoai Son

Lo, Guo-Qiang

Cho, Byung Jin

机构：

[1] STAR, Inst Microelect, Singapore 117685, Singapore

[2] SEMATECH, Austin, TX 78741 USA

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[5] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 12期

关键词：

carbon; field-effect transistor; heterostructure; mobility; MOSFETs; SiGe; silicon;

D O I：

10.1109/TED.2007.908599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-kappa dielectrics on Si/Si1-xGex with buried Si0.99C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-xGex channel p-MOSFET with the buried Si0.99C0.01 shows drive current improvement of up to 20% and better noise immunity.

引用

页码：3292 / 3298

页数：7

共 26 条

[21] CHARGE ACCUMULATION AND MOBILITY IN THIN DIELECTRIC MOS-TRANSISTORS [J].