Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers

被引：106

作者：

Gao, Li ^{[1
]}

Jiang, Xin

Yang, See-Hun

Burton, J. D.

Tsymbal, Evgeny Y.

Parkin, Stuart S. P.

机构：

[1] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

[2] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.99.226602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias voltage. Distinctly different TAMR behaviors are obtained for devices formed with highly textured crystalline MgO(001) and amorphous Al2O3 tunnel barriers. A tight-binding model shows that a fourfold angular dependence can be explained by the presence of an interface resonant state that affects the transmission of the contributing tunneling states through a spin-orbit interaction.

引用

页数：4

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