Molecular beam epitaxy growth and properties of Co2TiSi thin films on GaAs(001): the effect of growth temperature

被引：6

作者：

Dau, M. T. ^{[1
]}

Herfort, J. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 02期

关键词：

heusler alloy; ferromagnetic; spincalorics; spintronics; MAGNETIC-PROPERTIES; SPIN; CO2MNGE;

D O I：

10.1088/0022-3727/48/2/025003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy growth of ferromagnetic Co2TiSi films on GasAs(0 0 1) substrates is presented and it is found that the optimum growth temperature is between 300-360 degrees C where the film is single phase and exhibits highly (0 0 1)-ordered crystal structure. The Co2TiSi films are ferromagnetic up to 300 K and the highest value of saturation magnetization obtained is of 0.8 mu(B) per formula unit. The Co2TiSi films also exhibit a very low degree of magnetic anisotropy along in-plane crystallographic directions. Expected values of Seebeck coefficient and resistivity measured at room temperature confirm good stoichiometry of the Co2TiSi films and indicate that this material is a promising candidate for both spincaloric and spintronic applications.

引用

页数：6

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