A High Power Density Two-Stage GaN-Based Isolated Bi-Directional DC-DC Converter

被引：0
|
作者：
Luan, Shaokang [1 ]
Wu, Zongheng [1 ]
Wang, Zhiwei [1 ]
Liu, Xinmin [1 ]
Chen, Cai [1 ]
Kang, Yong [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Elect & Elect Engn, Wuhan, Peoples R China
来源：
2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2019年
关键词：
Gallium Nitride; high-electron-mobility transistor; planar transformer; LLC resonant converter; TRANSFORMER;
D O I：
10.1109/ecce.2019.8912169
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is widely used in isolated bi-directional DC-DC converters for electric vehicle charger, photovoltaic system, datacenter, etc. The trend of isolated bi-directional DC-DC converters is high efficiency, high frequency and high power density. In this paper, a 400W 400V/18V similar to 25V two-stage GaN-based isolated bi-directional DC-DC converter is proposed. A low cost three PCBs stacked structure is proposed to design LLC transformer and Buck/Boost filter inductor. Finally, a standalone prototype converter is demonstrated to verify the front design. The prototype achieves peak closed-loop efficiency of 96.5%, closed-loop control error less than 1% and power density of 107W/in(3).
引用
收藏
页码：3240 / 3244
页数：5
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