Phonon scattering limited performance of monolayer MoS2 and WSe2 n-MOSFET

被引：26

作者：

Sengupta, Amretashis ^{[1
]}

Chanana, Anuja ^{[2
]}

Mahapatra, Santanu ^{[2
]}

机构：

[1] Indian Inst Engn Sci & Technol, Sch VLSI Technol, Sibpur 711103, Howrah, India

[2] Indian Inst Sci, Nanoscale Device Res Lab, Dept Elect Syst Engn, Bangalore 560012, Karnataka, India

来源：

AIP ADVANCES | 2015年 / 5卷 / 02期

关键词：

Electron-phonon interactions - Electronic properties - Tungsten compounds - Layered semiconductors - Monolayers - Electron scattering - Molybdenum compounds - Local density approximation - MOSFET devices;

D O I：

10.1063/1.4907697

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper we show the effect of electron-phonon scattering on the performance of monolayer (1L) MoS2 and WSe2 channel based n-MOSFETs. Electronic properties of the channel materials are evaluated using the local density approximation (LDA) in density functional theory (DFT). For phonon dispersion we employ the small displacement / frozen phonon calculations in DFT. Thereafter using the non-equilibrium Green's function (NEGF) formalism, we study the effect of electron-phonon scattering and the contribution of various phonon modes on the performance of such devices. It is found that the performance of the WSe2 device is less impacted by phonon scattering, showing a ballisticity of 83% for 1L-WSe2 FET for channel length of 10 nm. Though 1L-MoS2 FET of similar dimension shows a lesser ballisticity of 75%. Also in the presence of scattering there exist a a 21-36% increase in the intrinsic delay time (tau) and a 10-18% reduction in peak transconductance (g(m)) for WSe2 and MoS2 devices respectively. (C) 2015 Author(s).

引用

页数：9