Characterization and in-line monitoring of low-k porogen formation

The competitive requirement for increased device performance has compelled the IC industry to introduce lower dielectric constant (k) materials. The move away from conventional oxide deposition techniques has significantly increased the complexity of the manufacturing process. There are a number of methods that can be used to achieve low-k films, including the controlled introduction of porosity. Here the dielectric constant is lowered in relation to the film's decrease in bulk density. Mass analysis can quantitatively monitor the UV cure process for the production of porous low-k materials.