Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields

被引：45
|
作者：
Das, MK [1 ]
Sumakeris, JJ [1 ]
Hull, BA [1 ]
Richmond, J [1 ]
Krishnaswami, S [1 ]
Powell, AR [1 ]
机构：
[1] Cree Inc, Durham, NC 27703 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
PiN diode; high voltage; V-f drift; BPD; device yield;
D O I：
10.4028/www.scientific.net/MSF.483-485.965
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The path to commericializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 W 4H-SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a high yielding process with V-F as low as 3.9 V @ 100 A/cm(2). Furthermore, incorporation of two independent basal plane dislocation reduction processes (LBPD 1 and LBPD 2) have produced a large number of devices that exhibit a high degree of forward voltage stability with encouraging reverse blocking capability. This results in a total yield (forward, 10 W blocking, and drift) of > 20% for 8.7 mm x 8.7 mm power PiN diode chips-the largest SiC chip reported to date.
引用
收藏
页码：965 / 968
页数：4
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