Development of an odorant sensor with a cell-free synthesized olfactory receptor and a graphene field-effect transistor

被引:7
|
作者
Yoshii, Tomoya [1 ]
Takayama, Ikumi [2 ]
Fukutani, Yosuke [2 ]
Ikuta, Takashi [1 ]
Maehashi, Kenzo [1 ]
Yohda, Masafumi [2 ]
机构
[1] Tokyo Univ Agr & Technol, Dept Adv Appl Phys, 2-24-16 Naka Cho, Koganei, Tokyo 1848588, Japan
[2] Tokyo Univ Agr & Technol, Dept Biotechnol & Life Sci, 2-24-16 Naka Cho, Koganei, Tokyo 1848588, Japan
关键词
Olfactory receptor; Graphene; In vitro expression; Chemical sensor; Mini-G protein;
D O I
10.1007/s44211-022-00073-y
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Animals sense odorants using olfactory receptors. Many trials have been conducted to develop artificial odorant sensors using olfactory receptors. However, the development has been hindered by the difficulty in obtaining olfactory receptors. In this study, we expressed an olfactory receptor, cOR52, using a wheat germ cell-free synthesis system. The functionality of the expressed cOR52 was confirmed by ligand concentration-dependent interactions with the mini-G protein. The expressed cOR52 was immobilized on a graphene field-effect transistor. The cOR52-modified graphene field-effect transistor exhibited a ligand-specific response between 100 nM and 100 mu M. This approach seems to be applicable for other olfactory receptors. Therefore, it will be possible to develop an odorant sensor equipped with various olfactory receptors by this method.
引用
收藏
页码:241 / 245
页数:5
相关论文
共 50 条
  • [21] Enhanced Gas Detection by Altering Gate Voltage Polarity of Polypyrrole/Graphene Field-Effect Transistor Sensor
    Tang, Xiaohui
    Raskin, Jean-Pierre
    Reckinger, Nicolas
    Yan, Yiyi
    Andre, Nicolas
    Lahem, Driss
    Debliquy, Marc
    CHEMOSENSORS, 2022, 10 (11)
  • [22] Fabrication of Graphene Field-effect Transistor with Field Controlling Electrodes to improve fT
    Al-Amin, C.
    Karabiyik, M.
    Pala, N.
    MICROELECTRONIC ENGINEERING, 2016, 164 : 71 - 74
  • [23] Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
    Vieira, N. C. S.
    Borme, J.
    Machado, G., Jr.
    Cerqueira, F.
    Freitas, P. P.
    Zucolotto, V.
    Peres, N. M. R.
    Alpuim, P.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (08)
  • [24] Graphene film synthesis on SiGe semiconductor substrate for field-effect transistor
    Chen, Da
    Wang, Gang
    Li, Jinhua
    Guo, Qinglei
    Ye, Lin
    Zhou, Huaijuan
    Zheng, Li
    Zhang, Miao
    Liu, Su
    MATERIALS LETTERS, 2014, 135 : 222 - 225
  • [25] Ultraviolet photodetector based on the hybrid graphene/phosphor field-effect transistor
    Li, Hao
    Su, Shubin
    Liang, Chenhui
    Huang, Meizhen
    Ma, Xiang
    Yu, Guanghui
    Tao, Haihua
    OPTICAL MATERIALS, 2020, 109
  • [26] Growth of controlled thickness graphene by ion implantation for field-effect transistor
    Wang, Gang
    Ding, Guqiao
    Zhu, Yun
    Chen, Da
    Ye, Lin
    Zheng, Li
    Zhang, Miao
    Di, Zengfeng
    Liu, Su
    MATERIALS LETTERS, 2013, 107 : 170 - 173
  • [27] Advantages of a buried-gate structure for graphene field-effect transistor
    Lee, Sang Kyung
    Kim, Yun Ji
    Heo, Sunwoo
    Park, Woojin
    Yoo, Tae Jin
    Cho, Chunhum
    Hwang, Hyeon Jun
    Lee, Byoung Hun
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (05)
  • [28] Biosensing with Insect Odorant Receptor Nanodiscs and Carbon Nanotube Field-Effect Transistors
    Murugathas, Thanihaichelvan
    Zheng, Han Yue
    Colbert, Damon
    Kralicek, Andrew V.
    Carraher, Colm
    Plank, Natalie O. V.
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (09) : 9530 - 9538
  • [29] FIELD-EFFECT TRANSISTOR BASED ON GRAPHENE - POROUS SILICON HYBRID STRUCTURE
    Olenych, I. B.
    Boyko, Ya. V.
    JOURNAL OF PHYSICAL STUDIES, 2023, 27 (01):
  • [30] GFETSIM: Graphene Field-Effect Transistor Simulator of Interface Charge Density
    Leong, Chie Hou
    Chin, Huei Chaeng
    Ang, Chin Wei
    Ng, Chin Khai
    Najam, Faraz
    Lim, Cheng Siong
    Tan, Swee Ching
    Tan, Michael Loong Peng
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 12 (04) : 304 - 315