The influence of substrate temperature on ZnO thin films prepared by PLD technique

被引：45

作者：

Zhao, Yan

Jiang, Yijian ^{[1
]}

Fang, Yan

机构：

[1] Beijing Univ Technol, Natl Ctr Laser Technol, Beijing 100022, Peoples R China

[2] Capital Normal Univ, Beijing Key Lab Nanophoton & Nanostruct, Beijing 100037, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 307卷 / 02期

基金：

中国国家自然科学基金;

关键词：

crystal quality; Raman spectroscopy; photoluminescence; x-ray diffraction; pulsed laser deposition; zinc oxide; PULSED-LASER DEPOSITION; MOLECULAR-BEAM EPITAXY; X-RAY-DIFFRACTION; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; RAMAN; PHOTOLUMINESCENCE; SAPPHIRE; GROWTH;

D O I：

10.1016/j.jcrysgro.2007.07.025

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO thin films were grown by pulsed laser deposition (PLD) at different substrate temperature ranging from 200 to 700 degrees C. X-ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL) and Raman spectroscopy are applied to investigate the change of properties. The results suggest that Raman scattering is the more effective technique to reveal the crystal quality of ZnO thin films compared with XRD and PL spectrum. The intensity of the UV emission peaks and XRD spectrum suggest no much dependence on the crystal quality. The higher temperature of the substrate, the easier of the defects will be formed during the deposition, and optimum temperature is 400 degrees C in this letter. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：278 / 282

页数：5

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