The influence of substrate temperature on ZnO thin films prepared by PLD technique

被引：45
作者：
Zhao, Yan
Jiang, Yijian [1 ]
Fang, Yan
机构：
[1] Beijing Univ Technol, Natl Ctr Laser Technol, Beijing 100022, Peoples R China
[2] Capital Normal Univ, Beijing Key Lab Nanophoton & Nanostruct, Beijing 100037, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 307卷 / 02期
基金：
中国国家自然科学基金;
关键词：
crystal quality; Raman spectroscopy; photoluminescence; x-ray diffraction; pulsed laser deposition; zinc oxide; PULSED-LASER DEPOSITION; MOLECULAR-BEAM EPITAXY; X-RAY-DIFFRACTION; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; RAMAN; PHOTOLUMINESCENCE; SAPPHIRE; GROWTH;
D O I：
10.1016/j.jcrysgro.2007.07.025
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
ZnO thin films were grown by pulsed laser deposition (PLD) at different substrate temperature ranging from 200 to 700 degrees C. X-ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL) and Raman spectroscopy are applied to investigate the change of properties. The results suggest that Raman scattering is the more effective technique to reveal the crystal quality of ZnO thin films compared with XRD and PL spectrum. The intensity of the UV emission peaks and XRD spectrum suggest no much dependence on the crystal quality. The higher temperature of the substrate, the easier of the defects will be formed during the deposition, and optimum temperature is 400 degrees C in this letter. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：278 / 282
页数：5
相关论文
共 21 条
[1]   Synthesis and characterization of ZnO thin film grown by electron beam evaporation [J].
Agarwal, D. C. ;
Chauhan, R. S. ;
Kumar, Amit ;
Kabiraj, D. ;
Singh, F. ;
Khan, S. A. ;
Avasthi, D. K. ;
Pivin, J. C. ;
Kumar, M. ;
Ghatak, J. ;
Satyam, P. V. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)
[2]   Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique [J].
Asmar, RA ;
Atanas, JP ;
Ajaka, M ;
Zaatar, Y ;
Ferblantier, G ;
Sauvajol, JL ;
Jabbour, J ;
Juillaget, S ;
Foucaran, A .
JOURNAL OF CRYSTAL GROWTH, 2005, 279 (3-4) :394-402
[3]   X-ray diffraction study of the early stages of the growth of nanoscale zinc oxide crystallites obtained from thermal decomposition of four precursors. General concepts on precursor-dependent microstructural properties [J].
Audebrand, N ;
Auffredic, JP ;
Louer, D .
CHEMISTRY OF MATERIALS, 1998, 10 (09) :2450-2461
[4]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[5]   Photoluminescence and Raman behaviors of ZnO nanostructures with different morphologies [J].
Chen, SJ ;
Liu, YC ;
Lu, YM ;
Zhang, JY ;
Shen, DZ ;
Fan, XW .
JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) :55-58
[6]   Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].
Chen, YF ;
Bagnall, DM ;
Koh, HJ ;
Park, KT ;
Hiraga, K ;
Zhu, ZQ ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918
[7]   Enhanced resonant Raman scattering and electron-phonon coupling from self-assembled secondary ZnO nanoparticles [J].
Cheng, HM ;
Lin, KF ;
Hsu, HC ;
Lin, CJ ;
Lin, LJ ;
Hsieh, WF .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (39) :18385-18390
[8]   High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD [J].
Haga, K ;
Suzuki, T ;
Kashiwaba, Y ;
Watanabe, H ;
Zhang, BP ;
Segawa, Y .
THIN SOLID FILMS, 2003, 433 (1-2) :131-134
[9]   Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy [J].
Heo, YW ;
Norton, DP ;
Pearton, SJ .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
[10]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899
123