Utilisation of a micro-tip scanning Kelvin probe for non-invasive surface potential mapping of mc-Si solar cells

被引:8
作者
Dirscherl, K
Baikie, I [1 ]
Forsyth, G
van der Heide, A
机构
[1] Kelvin Res Ctr, Environm Res Inst, Thurso KW14 7JD, Scotland
[2] Robert Gordon Univ, Sch Engn, Aberdeen AB25 IHG, Scotland
[3] ECN Solar Energy, NL-1755 ZG Petten, Netherlands
关键词
high-resolution scanning Kelvin probe; multi-crystalline silicon; surface potential mapping; shunt detection; non-invasive surface charge profiling;
D O I
10.1016/S0927-0248(03)00064-3
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We have applied a micro-tip Scanning Kelvin Probe to produce high-resolution surface potential maps of silicon nitride (Si3N4) coated multi-crystalline Silicon (mc-Si) solar cells in a non-contact, non-invasive fashion. We show this technique highlights two types of defects: localised surface charge and shunts. In the latter case we contrast the non-contact surface potential maps with contact measurements made by the Shuntscan technique. Using a guarded micro-tip with active shield we show for the first time surface potential changes at the mc-Si grain boundaries which are due to different mc-Si polytypes. The high-resolution scanning Kelvin probe (HR-SKP) has a surface potential resolution of < 10 mV at a tip diameter < 200 mum. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:485 / 494
页数:10
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