Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films

被引:14
|
作者
Ihlefeld, J. F. [1 ]
Folkman, C. M. [2 ]
Baek, S. H. [2 ]
Brennecka, G. L. [1 ]
George, M. C. [1 ]
Carroll, J. F., III [1 ]
Eom, C. B. [2 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
基金
美国国家科学基金会; 美国能源部;
关键词
THIN-FILMS; FERROELECTRIC PROPERTIES; PIEZOELECTRIC CERAMICS; PERMITTIVITY;
D O I
10.1063/1.3533017
中图分类号
O59 [应用物理学];
学科分类号
摘要
Rayleigh analysis has been used to investigate dielectric nonlinearity in epitaxial (001)-oriented BiFeO3 films with engineered domain structures from single-to four-variant and stripe domain samples with 71 and 109 domain walls. Single-domain variant films display minimal irreversible contributions, whereas the ratio of irreversible to reversible contributions increases by approximately one order of magnitude as the number of variants increases to two-and four-variants, respectively. These measurements indicate that the density of domain walls and degree of domain wall complexity influence the number and strength of domain wall pinning sites. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3533017]
引用
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页数:3
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