Full-range electrical characteristics of WS2 transistors

被引：63

作者：

Kumar, Jatinder ^{[1
]}

Kuroda, Marcelo A. ^{[2
]}

Bellus, Matthew Z. ^{[1
]}

Han, Shu-Jen ^{[3
]}

Chiu, Hsin-Ying ^{[1
]}

机构：

[1] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 12期

关键词：

MULTILAYER MOS2 TRANSISTORS; TRANSITION; TRANSPORT; LAYERS; HETEROSTRUCTURES;

D O I：

10.1063/1.4916403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated transistors formed by few layers to bulk single crystal WS2 to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10(12) cm(-2)) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit on a back-gated device on SiO2/Si substrate. (C) 2015 AIP Publishing LLC.

引用

页数：4

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