Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

被引：18

作者：

Cheng, Tien-Hung ^{[1
,2
]}

Chang, Sheng-Po ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 11期

关键词：

Thin film transistor; IAZO; RF sputtering; oxygen pressure; ROOM-TEMPERATURE; ACTIVE CHANNEL; ZNO FILMS; LAYER; TFTS;

D O I：

10.1007/s11664-018-6618-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300 degrees C and 500 degrees C. Analysis of optical properties (performed via UV-Vis spectroscopy) shows that the bandgap increased from 5.24eV to 5.32eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19eV when the flow ratio reached 6%. An appropriate variation of the O-2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67cm(2)/Vs, I-on/I-off 3.37x10(6), and S.S. 0.61V/dec.

引用

页码：6923 / 6928

页数：6