Quantum-wire effects in trigate SOI MOSFETs

被引：37

作者：

Colinge, Jean-Pierre ^{[2
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[2] Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 09期

基金：

爱尔兰科学基金会;

关键词：

SOI; silicon-on-insulator; MOSFET;

D O I：

10.1016/j.sse.2007.07.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Trigate SOI transistors have been modeled using the Poisson and Schrodinger equations. In devices with a large enough cross section, inversion channels form at the Si/SiO2 interfaces, but in devices with a small section, volume inversion is clearly visible. A transition between a one-dimensional density of states to a two-dimensional density of states is observed when the height of the fin is increased. Current oscillations are experimentally observed when the gate voltage is increased. These are due to a quantum-wire effect in which electron mobility is affected by intersubband scattering. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1153 / 1160

页数：8

共 29 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] A compact Double-Gate MOSFET model comprising quantum-mechanical and nonstatic effects [J].

Baccarani, G ;

Reggiani, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) :1656-1666

[3] Two-dimensional confinement effects in gate-all-around (GAA) MOSFETS [J].

Baie, X ;

Colinge, JP .

SOLID-STATE ELECTRONICS, 1998, 42 (04) :499-504

[4]

Baie X, 1995, 1995 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, P66, DOI 10.1109/SOI.1995.526463

[5] DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE [J].

BALESTRA, F ;

CRISTOLOVEANU, S ;

BENACHIR, M ;

BRINI, J ;

ELEWA, T .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :410-412

[6]

BUTCHER PN, 1993, PHYSICS LOW DIMENSIO, P95

[7] Room-temperature low-dimensional effects in Pi-gate SOI MOSFETs [J].

Colinge, J. P. ;

Xiong, Weize ;

Cleavelin, C. R. ;

Schulz, T. ;

Schruefer, K. ;

Matthews, K. ;

Patruno, P. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) :775-777

[8]

Colinge J. P., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P595, DOI 10.1109/IEDM.1990.237128

[9] EVIDENCE OF 2-DIMENSIONAL CARRIER CONFINEMENT IN THIN N-CHANNEL SOI GATE-ALL-AROUND (GAA) DEVICES [J].

COLINGE, JP ;

BAIE, X ;

BAYOT, V .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (06) :193-195

[10] Quantum-mechanical effects in trigate SOI MOSFETs [J].

Colinge, JP ;

Alderman, JC ;

Xiong, WZ ;

Cleavelin, CR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (05) :1131-1136

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