Piezoelectric potential under two-dimensional superlattices

被引:3
|
作者
Petticrew, DE
Davies, JH [1 ]
Long, AR
Larkin, IA
机构
[1] Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8QQ, Lanark, Scotland
[2] Univ Sheffield, Dept Phys, Sheffield S3 7AY, S Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
piezoelectric effect; lateral superlattice;
D O I
10.1016/S0921-4526(98)00341-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Differential thermal contraction generates stress under gates on the surface of a semiconductor, which in turn induces a potential in a two-dimensional electron gas underneath. We have calculated the deformation and piezoelectric potentials under square and circular gates on common III-V surfaces. The piezoelectric potential is complicated and shows lower symmetry than the gate, which must be taken into account when designing superlattices. The deformation potential does not break the symmetry but is about an order of magnitude smaller. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:900 / 903
页数:4
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