A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface

被引：21

作者：

Galkin, K. N.

Kumar, Mahesh

Govind

Shivaprasad, S. M.

Korobtsov, Vv.

Galkin, N. G.

机构：

[1] Russian Acad Sci, Inst Automat & Control Process, Far Eastern Branch, Vladivostok 690041, Russia

[2] Natl Phys Lab, Surface Phys & Nanostructure Grp, New Delhi, India

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 22期

关键词：

magnesium; silicon; magnesium silicide; adsorption; electron energy loss spectroscopy;

D O I：

10.1016/j.tsf.2007.02.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The adsorption studies of magnesium on Si(111) substrate have been performed using AES, LEED and EELS at various substrate temperatures. It is observed that the sticking coefficient of magnesium on the silicide surface is close to zero for temperatures greater than 100 degrees C. It has been shown that the magnesium silicide grows as continuous films on Si substrate at temperature 100-140 degrees C, while for temperatures higher than 170 degrees C the magnesium silicide grows in the form of islands. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8192 / 8196

页数：5

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