InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser

被引：27
作者：
Li, G. [1 ]
Yao, B. Q. [1 ]
Meng, P. B. [1 ]
Wang, W. [1 ]
Ju, Y. L. [1 ]
Wang, Y. Z. [1 ]
机构：
[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China
来源：
LASER PHYSICS LETTERS | 2011年 / 8卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Q-switched mode-locking; diode-pumped; Tm; Ho:YVO4; laser; saturable absorber; CONTINUOUS-WAVE OPERATION; 2044-NM TM; HOYALO3; LASER; MU-M; NM; ABSORPTION; STABILITY; ABLATION; PULSES; GROWTH; TM;
D O I：
10.1002/lapl.201010094
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A passively Q-switched mode-locking of continuous wave diode-pumped Tm,Ho:YVO4 laser by use of InGaAs/GaAs as a saturable absorber is reported for the first time as the author's know. The maximum Q-switched mode-locking output power was 210 mW at a wavelength of 2.05 mu m with pulse repetition frequency of 16.32 kHz. [GRAPHICS] Laser performance of the QML Tm,Ho:YVO4 laser. Blue square - CW output with high-reflector mirror M1, Blue triangle - QML output with SA, and green rotundity - QML PRF (C) 2011 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA
引用
收藏
页码：42 / 45
页数：4
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