The effect of the substitution of Gd for Ba site on Gd1+xBa2-xCu3O6+δ thin films

被引：23

作者：

Miyachi, K ^{[1
]}

Sudoh, K ^{[1
]}

Ichino, Y ^{[1
]}

Yoshida, Y ^{[1
]}

Takai, Y ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Energy Engn & Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2003年 / 392卷

关键词：

GBCO; GdBCO; thin film; substitution; solid solution;

D O I：

10.1016/S0921-4534(03)01018-9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gd1+xBa2-xCu3O6+delta thin films were fabricated on the MgO(100) substrate by pulsed laser deposition method. By changing the composition ratio x of the target, the amount x of the film was controlled. The growth of the films was strongly affected by Gd/Ba substitution; the surface of the films became flat and the orientation of the films changed from a-axis to c-axis orientation as x increased. The highest T-c was 91.5 K (x = 0.04), and the highest J(c) at 77 K was 3.0 MA/cm(2) (x = 0.04). In lower magnetic field, J(c) of the film of x = 0.08 showed higher value than x = 0. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1261 / 1264

页数：4

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