Effect of UV Exposure on Some Optical Properties of As-Se Based Chalcogenide Glasses

被引：35

作者：

Chauhan, Rashmi ^{[1
]}

Srivastava, Amit Kumar ^{[2
]}

Mishra, Madhu ^{[3
]}

Srivastava, K. K. ^{[3
]}

机构：

[1] DAV Coll Kanpur UP, Dept Phys, Kanpur, Uttar Pradesh, India

[2] IIT Kanpur UP, Mat Sci Programme, Kanpur, Uttar Pradesh, India

[3] DBS Coll Kanpur UP, Dept Phys, Kanpur, Uttar Pradesh, India

来源：

INTEGRATED FERROELECTRICS | 2010年 / 119卷

关键词：

Chalcogenide glass; As-Se; optical properties; UV exposure; photodarkening; photorefraction; THICKNESS; A-AS2SE3; AS2SE3; FILMS;

D O I：

10.1080/10584587.2010.489496

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk As40Se60 glass was prepared by melt quenching technique. Amorphous films of As40Se60 were prepared by thermal evaporation technique then exposed in UV light for 10 minutes. Virgin and exposed thin films were analyzed using transmission spectra to determine thickness (d), refractive index (n), extinction coefficient (k), optical absorption coefficient (alpha), optical band gap (E-g) and real and imaginary parts of dielectric constants (epsilon ' and epsilon ''). Results show 10 minutes UV exposure cause photodarkening (red shift in the optical band gap) and photorefraction (increase in refractive index) in As40Se60 thin film, which can be utilized for various photonic applications.

引用

页码：22 / 32

页数：11

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