The effects of electric and magnetic field on the hydrogenic donor impurity in GaN/AlxGa1-xN spherical quantum dot

Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot (QD) is investigated using the plane wave basis. The dependencies of the binding energy on electric field, magnetic field, QD radius and impurity position are obtained. The maximum of impurity binding energy is shifted from the centre of QD and the degenerating energy located for symmetrical positions with respect to the centre of QD are split in presence of the external electric field. The binding energy increases with the increases of magnetic field when the impurity located at the centre of QD. In the presence of electric and magnetic field simultaneously, an increase in the electric field strength leads to a decrease of the maxima of binding energy with an increase in magnetic field.