Terahertz time-domain spectroscopy of NiOx thin films

被引：0
|
作者：
Ha, Taewoo [1 ]
Choi, Kyujin [1 ]
Lee, Cheol Hyeok [1 ]
Lee, Kimoon [1 ]
Im, Seongil [1 ]
Kim, Jae Hoon [1 ]
机构：
[1] Yonsei Univ, Dept Phys, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年
关键词：
TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have measured the terahertz transmittance of NiOx thin films grown on Si by thermal evaporation. The frequency-dependent conductivities were determined without resorting to a Kramers-Kronig analysis. Large changes in these spectral functions occurred due to varying deposition rate and annealing temperature. We observed a direct correlation between these parameters with the electronic and optical properties of NiOx thin films.
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收藏
页码：792 / 793
页数：2
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