Detection of Potential Induced Degradation in mono and multi-crystalline silicon photovoltaic modules

被引：32

作者：

Kwembur, I. M. ^{[1
]}

McCleland, J. L. Crozier ^{[1
]}

van Dyk, E. E. ^{[1
]}

Vorster, F. J. ^{[1
]}

机构：

[1] Nelson Mandela Univ, Port Elizabeth, South Africa

来源：

PHYSICA B-CONDENSED MATTER | 2020年 / 581卷

基金：

新加坡国家研究基金会;

关键词：

Potential induced degradation (PID); Electroluminescence; Degradation; Shunt resistance; Series resistance;

D O I：

10.1016/j.physb.2019.411938

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Potential induced degradation (PID) is a performance limiting defect that profoundly impacts the power output of Photovoltaic (PV) modules. PID occurs because of leakage current between the solar cells and the aluminium frame. The leakage current develops due to high potential difference between the string voltage and the ground. In this work, PID is induced in a mono-crystalline and a multi-crystalline module and the severity is determined by current-voltage (I-V) measurements and Electroluminescence (EL) imaging. The Power dropped by 12.6% and 18.7% after 96 h of PID stress. The extracted parameters from the curves show that the shunt resistance decreases and series resistance increases after the induction of PID. EL imaging was done at 10% of short circuit current (I-sc) (low injection levels), manifesting as checkerboard like intensity distribution and distinct bimodal intensity histogram. The results of this study demonstrate different PID detection characterisation techniques in PV modules.

引用

页数：6

共 18 条

[11] A comparative investigation on in-situ and laboratory standard test of the potential induced degradation of crystalline silicon photovoltaic modules [J].