Cyclic Combinational Gate Diffusion Input (CCGDI) Technique- A New Approach of Low Power Digital Combinational Circuit Design

被引：0

作者：

Mukherjee, Biswarup ^{[1
]}

Roy, Biplab ^{[1
]}

Biswas, Arindam ^{[2
]}

Ghosal, Aniruddha ^{[3
]}

机构：

[1] NITMAS, Dept ECE, DH Rd, Jhinga, India

[2] HETC, Dept ECE, Hooghly, India

[3] Univ Calcutta, Inst RPE, Kolkata, India

来源：

2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRICAL, COMPUTER AND COMMUNICATION TECHNOLOGIES | 2015年

关键词：

Cyclic combinational circuit; CMOS; Gate Diffusion Input (GDI); low power design; magnitude comparator; seven segment decoder;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Cyclic Combinational Gate diffusion input (CCGDI)-a new approach of low-power digital combinational circuit design is described. This technique reduces power consumption, propagation delay and area of digital combinational circuits while it maintains low complexity of logic design. Performance comparison with traditional CMOS logic design technique is presented with the help of few examples.

引用

页数：6

共 6 条

[1] A New Approach for Cyclic Combinational Circuit Using TGDI
Kandasamy, Nehru
Telagam, Nagarjuna
Ahmad, Firodus
8TH INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTING & COMMUNICATIONS (ICACC-2018), 2018, 143 : 645 - 652
[2] Gate Diffusion Input Multi-Threshold Null Convention Logic Circuit Design Approach
Metku, Prashanthi
Choi, Minsu
Kim, Kyung-Ki
Kim, Yong-Bin
2020 17TH INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC 2020), 2020, : 282 - 283
[3] Design of Low Power standard cells using Full Swing Gate Diffusion Input
Hiremath, Sujatha
Mathad, Akshata
Hosur, Amruta
Koppad, Deepali
PROCEEDINGS OF THE 2017 INTERNATIONAL CONFERENCE ON SMART TECHNOLOGIES FOR SMART NATION (SMARTTECHCON), 2017, : 940 - 945
[4] A New Power Gating Circuit Design Approach Using Double-Gate FDSOI
Ashenafi, Emeshaw
Chowdhury, Masud H.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (08) : 1074 - 1078
[5] Design of a Low Power Full Adder with a Two Transistor EX-OR Gate Using Gate Diffusion Input of 90 nm
Reddy, J. Nageswara
Reddy, G. Karthik
Reddy, V. Padmanabha
ICCCE 2018, 2019, 500 : 403 - 410
[6] A novel design of low power and high read stability Ternary SRAM (T-SRAM), memory based on the modified Gate Diffusion Input (m-GDI) method in nanotechnology
Abiri, Ebrahim
Darabi, Abdolreza
MICROELECTRONICS JOURNAL, 2016, 58 : 44 - 59

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