TWO-MESA, GUARD RINGS ASSISTED TWO-ZONE JTE FOR ULTRAHIGH-VOLTAGE(>10KV) 4H-SiC P-I-N DIODES

被引：0
|
作者：
Ding, Yang [1 ]
Yue, Ruifeng [1 ]
Zhang, Li [1 ]
Wang, Yan [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
PIN-DIODES; THYRISTOR; KV;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel edge termination, referred to as two-mesa, guard rings (gr) assisted two-zone junction termination extension, is presented for ultrahigh-voltage (>10kV) 4H-SiC p-i-n diodes to extend the ultrahigh-voltage (UHV) JTE doping concentration window and increase the breakdown voltage. By device simulation and comparison using Sentaurus (R) simulator, a diode with UHV of 15450V is designed and the JTE doping concentration window is significantly extended by a ratio of 233.3%.
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页数：3
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