Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides

被引:156
作者
Dreyer, Cyrus E. [1 ,2 ]
Janotti, Anderson [1 ,3 ]
Van de Walle, Chris G. [1 ]
Vanderbilt, David [2 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08845 USA
[3] Univ Delaware, Mat Sci & Engn, Newark, DE 19716 USA
关键词
GALLIUM NITRIDE; ALUMINUM NITRIDE; ALXGA1-XN/GAN HETEROSTRUCTURES; PIEZOELECTRIC COEFFICIENTS; ELECTRON-GAS; FIELDS; TRANSISTORS; DEPENDENCE; MOBILITY; CHARGE;
D O I
10.1103/PhysRevX.6.021038
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal polarization, this method results in a spurious contribution to the spontaneous polarization differences between materials. In addition, we address the correct choice of "improper" versus "proper" piezoelectric constants. For the technologically important III-nitride materials GaN, AlN, and InN, we determine polarization discontinuities using a consistent reference based on the layered hexagonal structure and the correct choice of piezoelectric constants, and discuss the results in light of available experimental data.
引用
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页数:11
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