Study of the homogeneity of Fe-doped semiinsulating InP wafers

被引：0

作者：

Jimenez, J ^{[1
]}

Fornari, R ^{[1
]}

Curti, M ^{[1
]}

de la Puente, E ^{[1
]}

Avella, M ^{[1
]}

Sanz, LF ^{[1
]}

Gonzalez, MA ^{[1
]}

Alvarez, A ^{[1
]}

机构：

[1] ETS Ingn Ind, Fis Mat Condensada, Valladolid 47011, Spain

来源：

INFRARED APPLICATIONS OF SEMICONDUCTORS II | 1998年 / 484卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The homogeneity of semiinsulating Fe-doped InP wafers is studied using mapping techniques, Scanning Photocurrent (SPC) and Scanning Photoluminescence (SPL). These techniques allow to map with a micrometric spatial resolution the distribution of electrically active levels, in particular substitutional iron levels, Fe2+ and Fe3+. The correlation between both measurements allows to obtain information about the local compensation in terms of the [Fe3++Fe2+]/[Fe2+] ratio. Samples thermally treated were studied in order to analyse the consequences of the annealing on the homogeneity.

引用

页码：625 / 630

页数：6