Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO2 films

被引：8

作者：

Reddy, A. Sivasankar ^{[1
,2
]}

Figueiredo, N. M. ^{[1
]}

Cho, H. C. ^{[2
]}

Lee, K. S. ^{[2
]}

Cavaleiro, A. ^{[1
]}

机构：

[1] Univ Coimbra, SEG CEMUC, Dept Mech Engn, P-3030788 Coimbra, Portugal

[2] Kongju Natl Univ, Div Adv Mat Engn, Cheonan, South Korea

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2012年 / 133卷 / 2-3期

关键词：

Thin films; Nanostructures; Sputtering; Crystal structure; Electrical properties; SNO2; THIN-FILMS; DEPOSITION; SENSORS; BULK;

D O I：

10.1016/j.matchemphys.2012.02.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ag doped SnO2 (Ag:SnO2) films were prepared on glass substrates by pulsed dc magnetron sputtering. The effect of thermal annealing treatments on the physical properties of the films was investigated. Several analytical techniques such as X-ray diffraction, electron probe microanalysis, scanning electron microscopy, atomic force microscopy, four-point probe and double beam spectrophotometer were used to examine the changes in structural, compositional, surface morphology, electrical and optical properties. XRD results showed that the films were grown with (1 1 0) preferential orientation with an average grain size in the range from 4.8 to 8.9 nm. The smoothness of the films increased with annealing temperature. The films annealed at 500 degrees C presented an electrical resistivity of 0.007 Omega cm. The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1024 / 1028

页数：5

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