Ferroelectric SrBi4Ti4O15 thin films with high polarization grown on an IrO2 layer

被引:32
作者
Sohn, DS [1 ]
Xianyu, WX
Lee, WI
Lee, I
Chung, I
机构
[1] Inha Univ, Dept Chem, Inchon 402751, South Korea
[2] Inha Univ, Inha Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
[3] Samsung Adv Inst Technol, Suwon 440600, South Korea
关键词
D O I
10.1063/1.1421078
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric strontium bismuth titanate (SrBi4Ti4O15) thin films with a high remanent polarization were produced by a chemical solution deposition method. Pt and IrO2 layers were used as substrates. It was found that ferroelectric SrBi4Ti4O15 films can be successfully fabricated on IrO2: They demonstrate a saturated hysteresis loop at 5 V with remanent polarization (P-r) of 19 muC/cm(2) and coercive field (P-s) of 116 kV/cm. SrBi4Ti4O15 films grown on IrO2 show larger and denser grains and controlled surface morphology. The grains are random oriented, while those of films on Pt are mainly c-axis oriented. It is concluded that the high remanent polarization of the films grown on IrO2 originates from the relatively high concentration of a- and b-axis orientations. (C) 2001 American Institute of Physics.
引用
收藏
页码:3672 / 3674
页数:3
相关论文
共 21 条
[1]   INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES [J].
ALSHAREEF, HN ;
BELLUR, KR ;
KINGON, AI ;
AUCIELLO, O .
APPLIED PHYSICS LETTERS, 1995, 66 (02) :239-241
[2]  
AlShareef HN, 1996, APPL PHYS LETT, V68, P690, DOI 10.1063/1.116593
[3]   PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS [J].
AMANUMA, K ;
HASE, T ;
MIYASAKA, Y .
APPLIED PHYSICS LETTERS, 1995, 66 (02) :221-223
[4]   Formation of SrBi2Ta2O9 .1. Synthesis and characterization of a novel ''sol-gel'' solution for production of ferroelectric SrBi2Ta2O9 thin films [J].
Boyle, TJ ;
Buchheit, CD ;
Rodriguez, MA ;
AlShareef, HN ;
Hernandez, BA ;
Scott, B ;
Ziller, JW .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (09) :2274-2281
[5]   Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films [J].
Bu, SD ;
Park, BH ;
Kang, BS ;
Kang, SH ;
Noh, TW ;
Jo, W .
APPLIED PHYSICS LETTERS, 1999, 75 (08) :1155-1157
[6]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[7]   Synthesis and structural, ferroelectric, and piezoelectric properties of SrBi4Ti4O15 ceramics [J].
Gelfuso, MV ;
Thomazini, D ;
Eiras, JA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (09) :2368-2372
[8]   A positive temperature coefficient of resistivity effect from a paraelectric Pt/(Ba-0.5,Sr-0.5)TiO3/IrO2 thin-film capacitor [J].
Hwang, CS ;
Lee, BT ;
Cho, HJ ;
Lee, KH ;
Kang, CS ;
Hideki, H ;
Lee, SI ;
Lee, MY .
APPLIED PHYSICS LETTERS, 1997, 71 (03) :371-373
[9]   Dielectric and ferroelectric properties of SrBi4Ti4O15 single crystals [J].
Irie, H ;
Miyayama, M .
APPLIED PHYSICS LETTERS, 2001, 79 (02) :251-253
[10]   STRUCTURAL AND ELECTRICAL STUDIES ON RAPID THERMALLY PROCESSED FERROELECTRIC BI4TI3O12 THIN-FILMS BY METALLOORGANIC SOLUTION DEPOSITION [J].
JOSHI, PC ;
KRUPANIDHI, SB .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) :5827-5833