Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates

被引：32

作者：

Liu, Xinyu ^{[1
]}

Smith, David J. ^{[2
]}

Cao, Helin ^{[3
]}

Chen, Yong P. ^{[3
]}

Fan, Jin ^{[2
,4
]}

Zhang, Yong-Hang ^{[4
,5
]}

Pimpinella, Richard E. ^{[1
]}

Dobrowolska, Malgorzata ^{[1
]}

Furdyna, Jacek K. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[4] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA

[5] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 02期

基金：

美国国家科学基金会;

关键词：

FILMS; EPITAXY;

D O I：

10.1116/1.3668082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Films of pseudohexagonal Bi(T)(2)e(3), Bi2Se3 and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality. (C) 2012 American Vacuum Society. [DOI:10.1116/1.3668082]

引用

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