Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

被引：31
作者：
Nguyen, Hieu T. [1 ]
Han, Young [1 ]
Ernst, Marco [1 ]
Fell, Andreas [1 ]
Franklin, Evan [1 ]
Macdonald, Daniel [1 ]
机构：
[1] Australian Natl Univ, Coll Engn & Comp Sci, Res Sch Engn, Canberra, ACT 2601, Australia
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 02期
基金：
澳大利亚研究理事会;
关键词：
SOLAR-CELLS; TEMPERATURE; LUMINESCENCE; CONTACTS;
D O I：
10.1063/1.4926360
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the sub-band-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics. (C) 2015 AlP Publishing LLC.
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页数：5
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