Swift heavy ions induced mixing in metal/semiconductor system

被引：15

作者：

Kumar, Sarvesh ^{[1
,2
]}

Chauhan, R. S. ^{[1
]}

Agarwal, D. C. ^{[1
]}

Kumar, Manvendra ^{[3
]}

Tripathi, A. ^{[4
]}

Bolse, W. ^{[5
]}

Avasthi, D. K. ^{[4
]}

机构：

[1] RBS Coll, Dept Phys, Agra 282002, Uttar Pradesh, India

[2] CITM, Dept ASH Phys, Faridabad 121001, India

[3] Univ Allahabad, Dept Phys, Allahabad 211002, Uttar Pradesh, India

[4] Inter Univ Accelerator Ctr, New Delhi 110067, India

[5] Inst Strahlenphy, D-70569 Stuttgart, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 08期

关键词：

ion beam mixing; swift heavy ions;

D O I：

10.1016/j.nimb.2008.01.068

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated the ion beam mixing in the metal/semiconductor (Cu/Ge) system under swift heavy ion irradiation. For this study the samples have been prepared by electron gun evaporation in ultrahigh vacuum deposition system. The irradiations were performed at room temperature (RT) using 100 MeV Ag ions, 120 MeV and 140 MeV Au ions and at liquid nitrogen temperature (LT) using 120 MeV, 350 MeV Au ions with fluences ranging from 1 x 10(13) to 2.7 x 10(14) ions/cm(2). Characterizations of these samples have been performed using Rutherford backscattering spectroscopy (RBS) and atomic force microscopy (AFM). On analyzing the RBS data, we find that mixing occurs at the interface and it increases with the fluence, electronic energy loss and irradiation temperature. The mixing in this case is due to interdiffusion across the interface during a transient melt phase according to the thermal spike model. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1759 / 1763

页数：5

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