Development of single- and multi-layered metallic films on diamond by ion beam-assisted deposition

被引：8

作者：

Tjong, SC ^{[1
]}

Ho, HP ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

关键词：

ion beam-assisted deposition (IBAD); thermal stability; diamond; metallization;

D O I：

10.1016/S0925-9635(01)00412-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metallization of a chemical vapor-deposited diamond submount was prepared by ion beam-assisted deposition (IBAD). The IBAD process allowed the selection of metal species of particular interest, and control of the ion energy, leading to the formation of single- and multi-layered metal films on the diamond submount. The thermal stability after post-deposition annealing of three metallization systems, including Ni/Ti/diamond, Cr/Ti/diamond and W/Ti/diamond, with a eutectic AuSn layer magnetron sputter-deposited on top of these metallization schemes, was studied by Rutherford backscattering spectrometry. Results in relation to layer intermixing and metal-substrate adhesion are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1578 / 1583

页数：6

共 21 条

[1] MEASUREMENT OF ADHESION OF THIN FILMS [J].

BENJAMIN, P ;

WEAVER, C .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 254 (1277) :163-176

[2] State-of-the-art synthesis and post-deposition processing of large area CVD diamond substrates for thermal management [J].

Brown, WD ;

Beera, RA ;

Naseem, HA ;

Malshe, AP .

SURFACE & COATINGS TECHNOLOGY, 1996, 86-7 (1-3) :698-707

[3]

DOOLITTLE L, 1993, RUMP RBS SIMULATION

[4] ION-BEAM-INDUCED ADHESION IMPROVEMENT OF METAL LAYERS - A COMPARATIVE-STUDY ON COMPOSITE LAYERS [J].

FLADRY, H ;

TEGEN, N ;

WOLF, GK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 91 (1-4) :575-579

[5] REACTIVE AND NONREACTIVE ION MIXING OF NI FILMS ON CARBON SUBSTRATES [J].

GALUSKA, AA ;

UHT, JC ;

ADAMS, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (01) :99-109

[6] Structures and properties of copper thin films prepared by ion beam assisted deposition [J].

Gotoh, Y ;

Yoshii, H ;

Amioka, T ;

Kameyama, K ;

Tsuji, H ;

Ishikawa, J .

THIN SOLID FILMS, 1996, 288 (1-2) :300-308

[7] TI/PT/AU-SN METALLIZATION SCHEME FOR BONDING OF INP-BASED LASER-DIODES TO CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBMOUNTS [J].

KATZ, A ;

WANG, KW ;

BAIOCCHI, FA ;

DAUTREMONTSMITH, WC ;

LANE, E ;

LUFTMAN, HS ;

VARMA, RR ;

CURNAN, H .

MATERIALS CHEMISTRY AND PHYSICS, 1993, 33 (3-4) :281-288

[8] ADVANCED METALLIZATION SCHEMES FOR BONDING OF INP-BASED LASER DEVICES TO CVD-DIAMOND HEATSINKS [J].

KATZ, A ;

LEE, CH ;

TAI, KL .

MATERIALS CHEMISTRY AND PHYSICS, 1994, 37 (04) :303-328

[9] BONDING OF INP LASER-DIODES BY AU-SN SOLDER AND TUNGSTEN-BASED BARRIER METALLIZATION SCHEMES [J].

LEE, CH ;

TAI, KL ;

BACON, DD ;

DOHERTY, C ;

KATZ, A ;

WONG, YM ;

LANE, E .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (04) :379-386

[10] THE EQUIPMENT FOR AND PROCESS OF METAL-ION BEAM ENHANCED DEPOSITION [J].

LI, GQ ;

SU, XW ;

GONG, ZX ;

LIU, BZ ;

WEN, XY ;

MA, TC .

SURFACE & COATINGS TECHNOLOGY, 1994, 66 (1-3) :350-354

← 1 2 3 →