Mechanism for resistive switching in an oxide-based electrochemical metallization memory

被引：122

作者：

Peng, Shanshan

Zhuge, Fei ^{[1
]}

Chen, Xinxin

Zhu, Xiaojian

Hu, Benlin

Pan, Liang

Chen, Bin

Li, Run-Wei

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 07期

基金：

浙江省自然科学基金; 中国国家自然科学基金;

关键词：

SOLID-ELECTROLYTE; ZNO; RESISTANCE;

D O I：

10.1063/1.3683523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and rejuvenation occur at the ZnO/Pt (or AZO) interface, i.e., the cathodic interface. Therefore, the filament is most likely to have a conical shape, with wider and narrower diameters formed at the anodic and cathodic interfaces, respectively. It is inferred that the filament growth starts at the anode surface and stops at the cathode surface. Our results indicate that oxide-based ECM cells strongly differ from sulfide-and selenide-based ones in the resistive switching mechanism. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683523]

引用

页数：4

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