Carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells with different barrier thickness

被引：3

作者：

Liu, Yuejun ^{[1
]}

Weng, Guoen ^{[1
]}

Cao, Fuyi ^{[1
]}

Wang, Youyang ^{[1
]}

Wan, Wenjian ^{[2
]}

Wang, Chang ^{[2
]}

Nakamae, Hidekazu ^{[3
]}

Kim, Changsu ^{[3
]}

Hu, Xiaobo ^{[1
]}

Luo, Xianjia ^{[1
]}

Luo, Shuai ^{[4
]}

Chen, Shaoqiang ^{[1
,3
,5
]}

Chu, Junhao ^{[1
,5
]}

Akiyama, Hidefumi ^{[3
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, 500 Dongchuan Rd, Shanghai 200241, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, 865 Changning Rd, Shanghai 200050, Peoples R China

[3] Univ Tokyo, Inst Solid State Phys, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778581, Japan

[4] Jiangsu Huaxing Laser Technol Co Ltd, Pizhou City, Jiangsu, Peoples R China

[5] East China Normal Univ, Nanophoton & Adv Instrument Engn Res, Minist Educ, 500 Dongchuan Rd, Shanghai 200241, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2022年 / 12卷 / 03期

基金：

日本学术振兴会; 中国国家自然科学基金;

关键词：

TUNNELING DYNAMICS; LASER; ELECTRON; GAAS; RECOMBINATION; GAAS/ALGAAS; PARAMETERS; ESCAPE; TIMES;

D O I：

10.1364/OME.447078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical properties and carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells (ADQWs) with varied barrier thickness are studied by excitation-power-dependent photoluminescence (PL) and temperature-dependent time-resolved PL (TRPL) experiments. The origin of the transition energies derived from the time-integrated spectra is confirmed by theoretical calculation using the Schrodinger equation. The carrier kinetics and the temporal behavior of the emission in the narrow well (NW) and wide well (WW) are physically revealed with varying barrier thicknesses by the TRPL measurements. For a better understanding of the carrier transport mechanism, the electron tunneling times for the ADQWs are theoretically estimated based on a rate-equation model. The calculation indicates that the electron tunneling time decreases with increasing temperature, which may be induced by enhanced phonon-assisted scattering.

引用

页码：1291 / 1302

页数：12

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