Modulation instability in RF MEMS devices

被引：0
|
作者：
Marcelli, Romolo [1 ]
Bartolucci, Giancarlo [1 ,2 ]
De Angelis, Giorgio [1 ]
Lucibello, Andrea [1 ]
Proietti, Emanuela [1 ]
机构：
[1] CNR IMM Roma, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2012年 / 71卷 / 01期
关键词：
RF MEMS; Power handling; Modulation instability; Nonlinear Schrodinger equation; CHAOS; PROPAGATION; DISPERSION; WAVES;
D O I：
10.1007/s10470-011-9826-z
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than -40 dB the spectral purity of microwave sources.
引用
收藏
页码：59 / 67
页数：9
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