Few-Layered MoSe2 Nanosheets Confined in N,P-Doped Carbon Polyhedra for Sodium/Potassium-Ion Storage

被引:16
作者
Wang, Yuyu [1 ]
Kang, Wenpei [2 ]
Wang, Xiaotong [1 ]
Guo, Bingbing [1 ]
Cao, Dongxu [1 ]
Wang, Dandan [2 ]
Sun, Daofeng [2 ]
机构
[1] China Univ Petr East China, Coll Sci, Qingdao 266580, Shandong, Peoples R China
[2] China Univ Petr East China, Sch Mat Sci & Engn, Qingdao 266580, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
confinement effect; N; P-doped carbon; few-layered; MoSe2; nanosheets; sodium-/potassium-ion storage; POROUS CARBON; BINDING MOSE2; SODIUM; PERFORMANCE; ANODE; NANOPARTICLES; CONSTRUCTION; NANOSPHERES; ELECTRODES; FRAMEWORKS;
D O I
10.1021/acsanm.1c03297
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Few-layered MoSe2 nanosheets are significant for energy storage due to more active edges and improved conductivity. Herein, the cavity confinement effect of structure-efected UiO-66-NH2 is applied to host H3PMo12O40 units, which can be transformed into few-layered MoSe2 nanosheets confined into N,P-doped carbon polyhedrons (MoSe2/N,P-C) for fast Na+/K+-ion storage. Also, this unique architecture can provide sufficient active sites, alleviate the mechanical strain, and offer spacious channels for Na+/K+-ion transfer. Particularly, MoSe2/N,P-C(5:1) possesses superior sodium storage capability (316 mA h g(-1) at 2.0 A g(-1) within 300 cycles), promoted by the accelerated reaction kinetics and capacitive effect. In addition, an ultralong cycling stability with an expected capacity of 177 mA h g(-1) (1.0 A g(-1) after 1000 cycles) and a high rate capability (139.9 mA h g(-1) at 10.0 A g(-1)) can be achieved for the K+-ion storage. Ex situ Raman spectra and X-ray diffraction analysis imply a combined mechanism of a reversible intercalation-conversion process for active MoSe2 and partial reversibility of the N,P-C skeleton. In addition, the assembled MoSe2/N,P-C//Na3V2(PO4)(3)/C full cell also exhibits a capacity of 322.5 mA h g(-1) at 0.5 A g(-1), implying the potential application in practice.
引用
收藏
页码:497 / 507
页数:11
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