Experimental and theoretical investigation of Ga1-xInxAs surface reactivity to phosphorus -: art. no. 235314

被引：5
作者：
Wallart, X [1 ]
Priester, C [1 ]
机构：
[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
PHYSICAL REVIEW B | 2003年 / 68卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.68.235314
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ga1-xInxAs surfaces appear to show different behavior when exposed to phosphorus, depending on the In concentration. X-ray photoemission spectroscopy experiments provide information about phosphorus incorporation on several samples. Atomic-scale elastic energy calculations which include surface reconstructions emphasize the role or dimers for phosphorus incorporation and show a reasonable agreement for experiments that concern unstrained surfaces. Another roughening mechanism is proposed for strained surfaces.
引用
收藏
页数：10
相关论文
共 44 条
  • [21] SPINODAL-LIKE DECOMPOSITION OF INGAASP/(100) INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    LAPIERRE, RR
    OKADA, T
    ROBINSON, BJ
    THOMPSON, DA
    WEATHERLY, GC
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 155 (1-2) : 1 - 15
  • [22] HIGH-RESOLUTION SYNCHROTRON-RADIATION CORE-LEVEL SPECTROSCOPY OF DECAPPED GAAS(100) SURFACES
    LELAY, G
    MAO, D
    KAHN, A
    HWU, Y
    MARGARITONDO, G
    [J]. PHYSICAL REVIEW B, 1991, 43 (17): : 14301 - 14304
  • [23] Arsenic adsorption and exchange with phosphorus on indium phosphide (001)
    Li, CH
    Li, L
    Law, DC
    Visbeck, SB
    Hicks, RF
    [J]. PHYSICAL REVIEW B, 2002, 65 (20) : 1 - 7
  • [24] MADELUUNG O, 1982, LANDOLTBORNSTEIN, V17
  • [25] TEM STUDY OF THE EFFECT OF GROWTH INTERRUPTION IN MBE OF INGAP GAAS SUPERLATTICES
    MAHALINGAM, K
    NAKAMURA, Y
    OTSUKA, N
    LEE, HY
    HAFICH, MJ
    ROBINSON, GY
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (01) : 129 - 133
  • [26] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS
    MARTIN, RM
    [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +
  • [27] EPITAXIAL REGROWTH OF AN INAS SURFACE ON INP - AN EXAMPLE OF ARTIFICIAL SURFACES
    MOISON, JM
    BENSOUSSAN, M
    HOUZAY, F
    [J]. PHYSICAL REVIEW B, 1986, 34 (03): : 2018 - 2021
  • [28] Effects of PH3/H2 purge on the As concentration profile of InAsxP1-x/InP single quantum wells
    Moon, Y
    Yoon, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 212 (1-2) : 61 - 66
  • [29] Observation of two independent sources for arsenic carryover
    Moon, Y
    Lee, TW
    Yoon, S
    Yoo, K
    Yoon, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 160 - 164
  • [30] PANISH MB, 1993, GAS SOURCE MOL BEAMP
12345