Experimental and theoretical investigation of Ga1-xInxAs surface reactivity to phosphorus -: art. no. 235314

被引：5

作者：

Wallart, X ^{[1
]}

Priester, C ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.68.235314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga1-xInxAs surfaces appear to show different behavior when exposed to phosphorus, depending on the In concentration. X-ray photoemission spectroscopy experiments provide information about phosphorus incorporation on several samples. Atomic-scale elastic energy calculations which include surface reconstructions emphasize the role or dimers for phosphorus incorporation and show a reasonable agreement for experiments that concern unstrained surfaces. Another roughening mechanism is proposed for strained surfaces.

引用

页数：10

共 44 条

[1] Competition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsP
André, R
Wey, S
Tu, CW
[J]. JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) : 65 - 72
[2] Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure
Aurand, A
Leymarie, J
Vasson, A
Mesrine, M
Massies, J
Leroux, M
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 3775 - 3782
[3] Atomic scale structure of InAs(001)-(2 x 4) steady-state surfaces determined by scanning tunneling microscopy and density functional theory
Barvosa-Carter, W
Ross, RS
Ratsch, C
Grosse, F
Owen, JHG
Zinck, JJ
[J]. SURFACE SCIENCE, 2002, 499 (01) : L129 - L134
[4] Local aspects of the As-stabilized 2x3 reconstructed (001) surface of strained InxGa1-xAs alloys: A first-principles study
Bellaiche, L
Kunc, K
SauvageSimkin, M
Garreau, Y
Pinchaux, R
[J]. PHYSICAL REVIEW B, 1996, 53 (11): : 7417 - 7420
[5] Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces
Chiou, SW
Lee, CP
Hong, JM
Chen, CW
Tsou, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1999, 206 (03) : 166 - 170
[6] X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
Dehaese, O
Wallart, X
Schuler, O
Mollot, F
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 2127 - 2132
[7] GaP(001) and InP(001): Reflectance anisotropy and surface geometry
Esser, N
Schmidt, WG
Bernholc, J
Frisch, AM
Vogt, P
Zorn, M
Pristovsek, M
Richter, W
Bechstedt, F
Hannappel, T
Visbeck, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04): : 1691 - 1696
[8] ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY
FADLEY, CS
[J]. PROGRESS IN SURFACE SCIENCE, 1984, 16 (03) : 275 - 388
[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY
FARRELL, HH
PALMSTROM, CJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 903 - 907
[10] Improvement of InGaP/GaAs heterointerface quality by controlling AsH3 flow conditions
Fukai, YK
Hyuga, F
Nittono, T
Watanabe, K
Sugahara, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2524 - 2529

← 1 2 3 4 5 →