Progress of hydrogenation engineering in crystalline silicon solar cells: a review

被引:21
作者
Song, Lihui [1 ,2 ,3 ,4 ]
Hu, Zechen [1 ,2 ]
Lin, Dehang [1 ,2 ]
Yang, Deren [1 ,2 ,3 ,4 ]
Yu, Xuegong [1 ,2 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, 38 Zheda Rd, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, 38 Zheda Rd, Hangzhou 310027, Peoples R China
[3] Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 311200, Peoples R China
[4] Zhejiang Univ, Zhejiang Prov Key Lab Power Semicond Mat & Device, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311200, Peoples R China
基金
中国国家自然科学基金;
关键词
crystalline silicon; hydrogenation; crystallographic defects; boron-oxygen related defects; LeTID; TEMPERATURE-INDUCED DEGRADATION; BORON-OXYGEN COMPLEX; P-TYPE SILICON; MULTICRYSTALLINE SILICON; SURFACE PASSIVATION; INTERFACE PASSIVATION; ELECTRICAL-PROPERTIES; N-TYPE; LIFETIME DEGRADATION; CZOCHRALSKI SILICON;
D O I
10.1088/1361-6463/ac9066
中图分类号
O59 [应用物理学];
学科分类号
摘要
Crystalline silicon solar cells are always moving towards 'high efficiency and low cost', which requires continuously improving the quality of crystalline silicon materials. Nevertheless, crystalline silicon materials typically contain various kinds of impurities and defects, which act as carrier recombination centers. Therefore these impurities and defects must be well controlled during the solar cell fabrication processes to improve the cell efficiency. Hydrogenation of crystalline silicon is one important method to deactivate these impurities and defects, which is so-called 'hydrogenation engineering' in this paper. Hydrogen is widely reported to be able to passivate diverse defects like crystallographic defects, metallic impurities, boron-oxygen related defects and etc, but the effectiveness of hydrogen passivation depends strongly on the processing conditions. Moreover, in this decade, advanced hydrogenation technique has been developed and widely applied in the photovoltaic industry to significantly improve the performance of silicon solar cells. As the research on hydrogenation study has made a significant progress, it is the right time to write a review paper on introducing the state-of-the-art hydrogenation study and its applications in photovoltaic industry. The paper first introduces the fundamental properties of hydrogen in crystalline silicon and then discusses the applications of hydrogen on deactivating/inducing typical defects (e.g. dislocations, grain boundaries, various metallic impurities, boron-oxygen related defects and light and elevated temperature induced degradation defect) in p- and n-type crystalline silicon, respectively. At last, the benefits of hydrogenation engineering on the next-generation silicon solar cells (e.g. tunnel oxide passivated contact (TOPCon) and silicon heterojunction (SHJ) solar cells) are discussed. Overall, it was found that hydrogen can deactivate most of typical defects (sometimes induce defect) in n- and p-type crystalline silicon, leading to a significant efficiency enhancement in passivated emitter rear contact, TOPCon and SHJ solar cells. In conclusion, the paper aims to assist young researchers to better understand hydrogenation research.
引用
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页数:26
相关论文
共 139 条
[1]   INSITU CLEANING OF SILICON SUBSTRATE SURFACES BY REMOTE PLASMA-EXCITED HYDROGEN [J].
ANTHONY, B ;
BREAUX, L ;
HSU, T ;
BANERJEE, S ;
TASCH, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :621-626
[2]   The rapidly reversible processes of activation and deactivation in amorphous silicon heterojunction solar cell under extensive light soaking [J].
Bao, Shaojuan ;
Yang, Liyou ;
Huang, Jin ;
Bai, Yanhui ;
Yang, Ji ;
Wang, Jilei ;
Lu, Linfeng ;
Feng, Le ;
Bai, Xingliang ;
Ren, Fayuan ;
Li, Dongdong ;
Jia, Huijun .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (04) :4045-4052
[3]   n-p junction formation in p-type silicon by hydrogen ion implantation [J].
Barakel, D ;
Ulyashin, A ;
Périchaud, I ;
Martinuzzi, S .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) :285-290
[4]  
Bardhadi A., 1989, POLYCRYSTALLINE SEMI
[5]   Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells [J].
Bertoni, M. I. ;
Hudelson, S. ;
Newman, B. K. ;
Fenning, D. P. ;
Dekkers, H. F. W. ;
Cornagliotti, E. ;
Zuschlag, A. ;
Micard, G. ;
Hahn, G. ;
Coletti, G. ;
Lai, B. ;
Buonassisi, T. .
PROGRESS IN PHOTOVOLTAICS, 2011, 19 (02) :187-191
[6]  
BINNS MJ, 1994, MATER SCI FORUM, V143-, P861, DOI 10.4028/www.scientific.net/MSF.143-147.861
[7]   Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon [J].
Bothe, K ;
Hezel, R ;
Schmidt, J .
APPLIED PHYSICS LETTERS, 2003, 83 (06) :1125-1127
[8]   Light-induced lifetime degradation in high-performance multicrystalline silicon: Detailed kinetics of the defect activation [J].
Bredemeier, Dennis ;
Walter, Dominic ;
Schmidt, Jan .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2017, 173 :2-5
[9]   Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature [J].
Bredemeier, Dennis ;
Walter, Dominic ;
Herlufsen, Sandra ;
Schmidt, Jan .
AIP ADVANCES, 2016, 6 (03)
[10]   ATOMIC HYDROGEN-INDUCED INTERFACE DEGRADATION OF REOXIDIZED-NITRIDED SILICON DIOXIDE ON SILICON [J].
CARTIER, E ;
BUCHANAN, DA ;
DUNN, GJ .
APPLIED PHYSICS LETTERS, 1994, 64 (07) :901-903