Uncooled 25 Gbit/s direct modulation of semi-insulating buried-heterostructure 1.3 μm AlGaInAs quantum-well DFB lasers

被引：29

作者：

Otsubo, K. ^{[1
,2
,3
]}

Matsuda, M. ^{[1
,2
,3
]}

Takada, K. ^{[1
]}

Okumura, S. ^{[1
]}

Ekawa, M. ^{[1
,2
,3
]}

Tanaka, H. ^{[1
]}

Ide, S. ^{[1
]}

Mori, K. ^{[1
]}

Yamamoto, T. ^{[1
,2
,3
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[2] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan

[3] Optoelect Ind & Technol Dev Assoc, Bunkyo Ku, Tokyo 1120014, Japan

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 10期

关键词：

Heterojunctions - Light modulation - Low power electronics - Quantum well lasers - Semiconducting aluminum compounds;

D O I：

10.1049/el:20080693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Uncooled 25 Gbit/s direct modulation of 1.3 mu m DFB lasers is demonstrated. The 150 mu m-long semi-insulating buried-heterostructure AlGaInAs quantum-well DFB lasers show clear eye-openings with dynamic extinction ratio of 5 dB up to 70 degrees C. 13 km singlemode-fibre transmission experiments using the devices show low power penalty within 1.3 dB between 25 and 70 degrees C. These characteristics are the first achievement by 1.3 mu m directly modulated lasers.

引用

页码：631 / 632

页数：2

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