Multiple batch recharging for industrial CZ silicon growth

被引:13
作者
Fickett, B [1 ]
Mihalik, G [1 ]
机构
[1] Siemens Solar Ind, Vancouver, WA 98682 USA
关键词
batch recharging; Czochralski method; industrial crystallization; single crystal growth; semiconducting silicon; solar cells;
D O I
10.1016/S0022-0248(01)00956-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The Czochralski (CZ) crystal growth process used in the Siemens Solar Industries' (SSI) Vancouver. WA facility was non-continuous. Each furnace run's production was limited by the size of the starting charge. Once the charge was depleted, the furnace was shut down, cooled, and set back up for the next run. A recharge system was developed which transforms standard CZ growth into a semi-continuous process. Now when the charge is depleted, the crucible can be refilled in situ as the grown ingot is being removed from the furnace. SSI has demonstrated up to 14 recharge cycles in a single run. The resulting benefits included: significant cost reduction, increased yield, increased throughput, reduced energy consumption, improved process capability, reduced material handling requirements, and reduced labor. The recharge system also enables the use of granular silicon, which requires less than 30% of the energy required when manufacturing silicon-starting materials. This significantly reduces the energy "pay-brick" time associated with SSI's finished product, photovoltaic panels. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:580 / 585
页数:6
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